Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2
- 10 May 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (19) , 2770-2772
- https://doi.org/10.1063/1.124009
Abstract
The change in the reflection behavior of VO2 films for the 1.06 μm wavelength at the semiconductor–metal phase transition was investigated. The nonlinearity caused by photoinduced transition was used for phase conjugation of a pulsed Nd:YAG laser. At 60 Hz Q-switching rate and average intensities of the pump and probe waves at 1 and 0.3 W/cm2, respectively, the reflection coefficient of the conjugated wave was ∼1%, the threshold energy density was 8 mJ/cm2, the rise time of the signal was 30 ns. The response rate of the phase conjugation via the VO2 films is discussed.Keywords
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