Femtosecond laser excitation of the semiconductor-metal phase transition in VO2
- 19 September 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (12) , 1507-1509
- https://doi.org/10.1063/1.112974
Abstract
We have measured the subpicosecond optical response of a solid‐state, semiconductor‐to‐metal phase transition excited by femtosecond laser pulses. We have determined the dynamic response of the complex refractive index of VO2 thin films by making pump‐probe optical transmission and reflection measurements at 780 nm. The phase transition was found to be largely prompt with the optical properties of the high‐temperature metallic state being attained within 5 ps. The ultrafast change in complex refractive index enables ultrafast optical switching devices in VO2.Keywords
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