Use of In-Zn-As Ternary Sources for the Diffusion of Zn in GaAs by the Semiclosed-Box Method
- 1 June 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (6R) , 813
- https://doi.org/10.1143/jjap.25.813
Abstract
Liquid sources consisting of the In-Zn-As ternary system have been successfully used for the diffusion of Zn in GaAs by the semiclosed-box method. The surface concentration and junction depth were easily controlled over a wide range of source composition. The experimentally observed effects of the zinc and arsenic fractions in the source on the diffusion agree well with a model derived from interstitial-substitutional interchange.Keywords
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