Fluorescence EXAFS Study of AlGaAs Doped with Se Donor Impurities
- 1 November 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (11A) , L1806-1808
- https://doi.org/10.1143/jjap.26.l1806
Abstract
We performed extended X-ray absorption fine structure measurements on Al0.38Ga0.62As:Se in order to investigate the lattice relaxation accompanying the existence of the deep level. The local structure of Se donor impurities was observed by monitoring the Se Kαfluorescence yield. A small glancing angle arrangement was applied to suppress the effects of both Ga and As Kαfluorescence X-rays. The nearest-neighbor distances around Se were not influenced by the existence of the deep level.Keywords
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