Initial relaxation of photoexcited carriers in GaAs and GaAs quantum wells under subpicosecond excitation
- 30 April 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (3-4) , 435-438
- https://doi.org/10.1016/0038-1101(88)90312-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Nonlinear optical studies of picosecond relaxation times of electrons in n-GaAs and n-GaSbApplied Physics Letters, 1983
- Velocity-field characteristics of GaAs with Γc6-L c6-X c6 conduction-band orderingJournal of Applied Physics, 1977