Perimeter recombination in planar solar cells
- 15 April 1993
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (8) , 4042-4047
- https://doi.org/10.1063/1.352872
Abstract
The recombination in the perimeter region of a planar solar cell is analyzed. A simple, quasi‐analytical model is developed that allows the calculation of perimeter current in a variety of situations. Experimental confirmation of the model is obtained by measuring the current collected by the cell when the perimeter is illuminated. This measurement also informs us of internal cell parameters. Cells with high resistivity bases show the greatest perimeter recombination currents. In small size concentration cells this can cause a significant reduction of open circuit voltage: about 5 mV in our 1.5 cm2 cells at one sun that means 16 mV in 1 mm2 cells of the same technology. However, it is shown that the importance of this recombination component decreases as the concentration increases. Some methods for minimizing it are also discussed.This publication has 3 references indexed in Scilit:
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- Electron and hole mobilities in silicon as a function of concentration and temperatureIEEE Transactions on Electron Devices, 1982
- Intensity enhancement in textured optical sheets for solar cellsIEEE Transactions on Electron Devices, 1982