Deposition of tantalum oxide films by dual spectral source assisted metalorganic chemical vapor deposition (MOCVD)
- 1 April 1997
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 26 (4) , 350-354
- https://doi.org/10.1007/s11664-997-0100-1
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Deposition of high dielectric constant materials by dual spectral sources assisted metalorganic chemical vapor depositionApplied Physics Letters, 1995
- RIP for DielectricsThe Electrochemical Society Interface, 1995
- Rapid Isothermal Processing (RIP)Published by Elsevier ,1995
- Tantalum Oxide Thin Films for Dielectric Applications by Low‐Pressure Chemical Vapor Deposition: Physical and Electrical PropertiesJournal of the Electrochemical Society, 1993
- Thin Ta2O5 films prepared by low pressure metal organic CVDMicroelectronics Journal, 1993
- Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation prior to Low Pressure Chemical Vapor DepositionJournal of the Electrochemical Society, 1993
- Conduction Mechanism of Leakage Current in Ta2 O 5 Films on Si Prepared by LPCVDJournal of the Electrochemical Society, 1990
- Rapid isothermal processingJournal of Applied Physics, 1988
- Dielectric Characteristics of Double Layer Structure of Extremely Thin Ta2 O 5 / SiO2 on SiJournal of the Electrochemical Society, 1987
- Effects of Surface Oxide on Leakage Current of Magnetron‐Sputtered Ta2 O 5 on SiJournal of the Electrochemical Society, 1985