Growth of Sr1−xBaxF2 films on InAs by molecular beam epitaxy

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Abstract
Heteroepitaxial films of Sr1−x BaxF2 have been deposited onto (001), (110), and (111)B oriented InAs substrates by molecular beam epitaxy. The epitaxial growth was studied by reflection high energy electron diffraction (RHEED), electron microscopy, x‐ray diffraction, and secondary ion mass spectrometry (SIMS). The films grown epitaxially on the (001) and (110) substrates exhibit {111} faceting, and smooth and featureless growth occurs only on the (111)B oriented substrates. Single crystalline Sr1−x BaxF2 films lattice‐matched to the InAs substrates are grown at temperatures higher than 200, 450, and 400 °C on the (001), (110), and (111)B faces, respectively. SIMS profiles indicate that the interdiffusion between epitaxial film and substrate is rather small even at a growth temperature of 520 °C. The change in RHEED patterns during the thermal cleaning of substrate surfaces is also described.