Effect of p/i interface layer on dark J-V characteristics and Voc in p-i-n a-Si solar cells

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Abstract
Dark current‐voltage (J‐V) characteristics of p‐i‐n a‐Si solar cells are studied to clarify the effect of the p/i interface layer on the open‐circuit voltage (Voc). It is shown that the recombination current in the p/i interface region is predominant in the a‐Si solar cells with an i‐layer thickness of less than 200 nm and has a great effect on the dark‐current transport in the solar cells. It is also shown that the current transport of the cells with the p/i interface layer of constant band gap of a thickness of more than 14 nm is effectively the same as that of a cell in which the band gap of the whole i layer is equal to that of the interface layer. A model in which the dark current of the cell consists of the recombination current at the p/i interface and the recombination current in the bulk region of the i layer is proposed. Using this model, the Voc degradation for the a‐Si solar cells with the p/i interface layer is shown to be due to the defects generated in the i layer.

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