Direct observation of porous SiC formed by anodization in HF
- 31 May 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (22) , 2836-2838
- https://doi.org/10.1063/1.109226
Abstract
A process for forming porous SiC from single‐crystal SiC wafers has been demonstrated. Porous SiC can be fabricated by anodizing n‐type 6H‐SiC in HF under UV illumination. Transmission electron microscopy reveals pores of sizes 10–30 nm with interpore spacings ranging from ≊5 to 150 nm. This is the first reported direct observation of porous SiC formation.Keywords
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