Mixed-valence impurities in lead telluride-based solid solutions
Open Access
- 1 January 2002
- journal article
- Published by Uspekhi Fizicheskikh Nauk (UFN) Journal in Uspekhi Fizicheskih Nauk
- Vol. 172 (8) , 875-906
- https://doi.org/10.3367/ufnr.0172.200208b.0875
Abstract
No abstract availableThis publication has 75 references indexed in Scilit:
- Thallium dopant in lead chalcogenides: investigation methods and peculiaritiesUspekhi Fizicheskih Nauk, 1998
- Carrier Transport and Non-Equilibrium Phenomena in Doped PbTe and Related MaterialsPhysica Status Solidi (a), 1993
- Deep level defects in narrow gap semiconductorsPhysica Status Solidi (b), 1986
- Lead telluride doped with rare-earth elementsJournal of Applied Physics, 1985
- Deep and resonance states in AIV BVI semiconductorsUspekhi Fizicheskih Nauk, 1985
- Theory of Substitutional Deep Traps in Covalent SemiconductorsPhysical Review Letters, 1980
- Impurity and vacancy states in PbTeJournal of Applied Physics, 1976
- Cluster calculations of the effects of single vacancies of the electronic properties of PbSPhysical Review B, 1975
- Localized Defects in PbTePhysical Review B, 1971
- New Model for Vacancy States in PbTePhysical Review Letters, 1969