Quantum mechanical reflection at triangular ‘‘planar-doped’’ potential barriers for transistors

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Abstract
The quantum mechanical reflection of electrons attempting to overcome the quasitriangular collector potential barrier in a planar‐doped barrier transistor (PDBT) is an undesirable phenomenon that needs to be minimized. We describe a numerical technique for calculating the quantum mechanical reflection and transmission coefficients at triangular potential profiles that approximate the collector barrier of the PDBT. The results of these calculations, and the conclusions drawn, are presented.