Thermoelectric power in semiconducting alloys of the InPxAs 1-x system

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Abstract
A detailed analysis of the thermoelectric power and the Hall effect near room temperature in InP xAs1-x solid solutions for practically all necessary compositions x = 0 ; 0.1 ; 0.2 ; 0.3; 0.4; 0.5; 0.6; 0.7; 0.8; 1.0, containing various current carrier concentrations is given and discussed in terms of the nonparabolicity of the conduction band. The electron scattering mechanisms in the compound of InPxAs1-x system have been found on the basis of Ehrenreich assumption and with the help of measurements of the thermoelectric power and the Hall effect. The values of the electron effective masses were calculated as a function of the alloy composition. The results are in good agreement with the values calculated according to the Kane theory. The degree of the alloy nonparabolicity was determined. It has been shown that the conduction band of InAs compound and the alloys close to it is strongly nonparabolic and the nonparabolicity gradually decreases with the approach of the alloy composition to InP

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