Electrical band gap of porous silicon
- 20 June 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (25) , 3446-3448
- https://doi.org/10.1063/1.111237
Abstract
The electrical band gap of porous silicon is determined from measurements of the reverse bias current of homojunction pn porous silicon diodes versus temperature, resulting in a value of 2.2 eV. This value is in good agreement with the value of 1.97 eV obtained from photo‐ and electroluminescence experiments.Keywords
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