Measurements of Peltier cooling at a Ga-GaAs interface using a liquid-phase epitaxy system
- 1 July 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (7) , 3002-3005
- https://doi.org/10.1063/1.321988
Abstract
The Peltier coefficient of n‐type GaAs was measured by passing an electrical current through the GaAs‐Ga solid‐liquid interface in a vertical liquid‐phase epitaxy (LPE) system. Application of a steady‐state heat‐transfer analysis yielded values for the Peltier coefficient of 0.141 to 0.203 V in the 530–830 °C temperature range. From the study of measurements of Peltier cooling as a function of GaAs substrate thickness, current amplitude, and system geometry, it was concluded that effective utilization of Peltier cooling depends greatly on specimen thickness, doping, and furnace temperature, especially in LPE applications.This publication has 5 references indexed in Scilit:
- Application of Interface Demarcation to the Study of Facet Growth and Segregation: GermaniumJournal of the Electrochemical Society, 1974
- Current-Controlled Growth and Dopant Modulation in Liquid Phase EpitaxyJournal of the Electrochemical Society, 1973
- Modulation of Dopant Segregation by Electric Currents in Czochralski-Type Crystal GrowthJournal of the Electrochemical Society, 1971
- Application of the Peltier Effect for the Determination of Crystal Growth RatesJournal of the Electrochemical Society, 1968
- Nernst effect in n-type GaAsJournal of Physics and Chemistry of Solids, 1962