Deep levels in ZnSe/GaAs heterojunctions

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Abstract
Deep levels in n‐ZnSe/ p‐GaAs heterojunction diodes have been studied by deep‐level transient‐capacitance spectroscopy. As‐grown diodes have three well‐defined majority‐carrier traps of depths 0.30, 0.33, and 0.48 eV. A marked change in the concentration of the first two traps is caused by the Zn treatment of the diodes. They are tentatively identified as the Zn vacancy‐interstitial Ga complex and the Se vacancy on the n side of the junction. The third trap of unknown origin is possibly located on the p side of the junction. Discussion is made about the relationship between the behavior of these traps and properties of the devices after the Zn treatment.