Well Width Dependence of Threshold Current Density in Tensile-Strained InGaAs/InGaAsP Quantum-Well Lasers
- 1 November 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (11R)
- https://doi.org/10.1143/jjap.33.6199
Abstract
We investigated how the well width affected threshold current density in tensile-strained InGaAs/InGaAsP quantum well lasers. Lasers with wider wells had lower threshold current densities, independent of the cavity length. This is mainly caused by the reduction of the transparent current density.Keywords
This publication has 8 references indexed in Scilit:
- Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiersIEEE Journal of Quantum Electronics, 1994
- Comparative study of low-threshold 1.3 mu m strained and lattice-matched quantum-well lasersIEEE Photonics Technology Letters, 1993
- Low-threshold tensile-strained InGaAs-InGaAsP quantum-well lasers with single-step separate-confinement heterostructuresIEEE Journal of Quantum Electronics, 1993
- Submilliamp threshold current (0.62 mA at 0°C) and high output power (220 mW) 1.5 μm tensile strained InGaAs single quantum well lasersElectronics Letters, 1992
- Low threshold 1.5 μm tensile-strained single quantum well lasersElectronics Letters, 1991
- High temperature operation of lattice matched and strained InGaAs-InP quantum well lasersIEEE Photonics Technology Letters, 1991
- Strained-layer 1.5 μm wavelength InGaAs/InP multiple quantum well lasers grown by chemical beam epitaxyElectronics Letters, 1990
- Calculated threshold current of GaAs quantum well lasersJournal of Applied Physics, 1982