Comparative study of low-threshold 1.3 mu m strained and lattice-matched quantum-well lasers
- 1 July 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 5 (7) , 753-755
- https://doi.org/10.1109/68.229795
Abstract
A study of the effects of biaxial strain on the performance of low-threshold 1.3- mu m In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y//InP quantum-well lasers is presented. Lasers with lattice-matched, compressive-strained, and tensile-strained quantum-wells were fabricated to compare the effect of strain on various device parameters. Threshold current densities as low as 187 A/cm/sup 2/ for a two-quantum-well device with 0.85% compressive strain were obtained.Keywords
This publication has 6 references indexed in Scilit:
- Low threshold 1.3 μm strained and lattice matched quantum well lasersJournal of Crystal Growth, 1992
- Strained multiple quantum well lasers emitting at 1.3 μm grown by low-pressure metalorganic vapor phase epitaxyApplied Physics Letters, 1991
- Continuously graded-index separate confinement heterostructure multiquantum well Ga1−xInxAs1−yPy/InP ridge waveguide lasers grown by low-pressure metalorganic chemical vapor deposition with lattice-matched quaternary wells and barriersApplied Physics Letters, 1990
- High Quantum Efficiency, High Output Power 1.3 µm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser DiodesJapanese Journal of Applied Physics, 1989
- Band structure engineering of semiconductor lasers for optical communicationsJournal of Lightwave Technology, 1988
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986