Strained multiple quantum well lasers emitting at 1.3 μm grown by low-pressure metalorganic vapor phase epitaxy

This publication has 14 references indexed in Scilit:

• High power output 1.48–1.51 μm continuously graded index separate confinement strained quantum well lasers
  Applied Physics Letters, 1990
• Strained InGaAs/InP quantum well lasers
  Applied Physics Letters, 1990
• Growth and characterization of continuously graded index separate confinement heterostructure (GRIN-SCH) InGaAs-InP long wavelength strained layer quantum-well lasers by metalorganic vapor phase epitaxy
  IEEE Journal of Quantum Electronics, 1990
• High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μm
  Electronics Letters, 1989
• Enhancement of modulation bandwidth in InGaAs strained-layer single quantum well lasers
  Applied Physics Letters, 1989
• High Quantum Efficiency, High Output Power 1.3 µm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes
  Japanese Journal of Applied Physics, 1989
• 1.3μm GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD)
  Electronics Letters, 1989
• Reduction of lasing threshold current density by the lowering of valence band effective mass
  Journal of Lightwave Technology, 1986
• Band-structure engineering for low-threshold high-efficiency semiconductor lasers
  Electronics Letters, 1986
• Wavelength dispersion characteristics of single-mode fibers in low-loss region
  IEEE Journal of Quantum Electronics, 1980