Arsenic-doped CdTe epilayers grown by photoassisted molecular beam epitaxy
- 9 January 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (2) , 170-172
- https://doi.org/10.1063/1.101219
Abstract
We report the successful p‐type doping of CdTe films with arsenic using the photoassisted molecular beam epitaxy growth technique. These doped epilayers were grown at substrate temperatures as low as 180 °C. The room‐temperature hole concentrations in the CdTe:As layers ranged from 7×1015 to 6.2×1018 cm−3 as determined by van der Pauw–Hall effect measurements. We propose a doping mechanism responsible for the high p‐type doping levels observed in the films. The arsenic acceptor ionization energy was found to ∼58–60 meV using low‐temperature photoluminescence measurements.Keywords
This publication has 17 references indexed in Scilit:
- Properties of doped CdTe films grown by photoassisted molecular‐beam epitaxyJournal of Vacuum Science & Technology A, 1988
- Growth and properties of doped CdTe films grown by photoassisted molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1988
- Surface nuvleation kinetics of molecular beam epitaxial doped (001) and (111) CdTeJournal of Crystal Growth, 1988
- Properties of doped II–VI films and superlattices grown by photoassisted molecular beam epitaxyJournal of Crystal Growth, 1988
- Controlled substitutional doping of CdTe thin films grown by photoassisted molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1987
- Electronic properties of a shallow complex acceptor in CdTePhysical Review B, 1985
- Acceptor states in CdTe and comparison with ZnTe. General trendsPhysical Review B, 1984
- Growth of low dislocation density CdTe films on hydroplaned CdTe substrates by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1983
- Photoluminescence of Defect-Exciton Complexes in II-VI CompoundsPhysical Review Letters, 1965
- On the Electrical and Optical Properties of p-type Cadmium Telluride CrystalsJournal of the Physics Society Japan, 1960