The growth process and certain ferroelectric properties of heteroepitaxial (Ba1−xSrx)TiO3/MgO(001) thin films
- 1 February 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 208 (1) , 76-86
- https://doi.org/10.1016/0040-6090(92)90950-g
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The influence of structure on the piezoelectric properties of BaTiO3 and (BaSr)TiO3 thin films with a diffuse phase transitionThin Solid Films, 1989
- Epitaxial ordering of oxide superconductor thin films on (100) SrTiO3 prepared by pulsed laser evaporationApplied Physics Letters, 1987
- A New MOS Phototransistor Operating in a Non-Destructive Readout ModeJapanese Journal of Applied Physics, 1985
- Changes of Volume and Surface Compositions of Polymethylmethacrylate under Electron Beam Irradiation in LithographyJapanese Journal of Applied Physics, 1985
- Dielectric Properties of PLZT Epitaxial Thin FilmsJapanese Journal of Applied Physics, 1983
- A system for deposition of ferroelectric substances by radio-frequency sputteringThin Solid Films, 1978
- Rochelle Salt as a DielectricPhysical Review B, 1930