Liquid-amorphous phase transition in Si under nanosecond laser irradiating: Discussion of a simple thermal model
- 31 October 1983
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 98 (7) , 367-370
- https://doi.org/10.1016/0375-9601(83)90239-6
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Coincidence of the thermal melting points of crystalline and amorphous Si and coincidence of thresholds for pulsed beam annealing of crystalline and amorphous Si and GaAsSolid State Communications, 1982
- Transitions to Defective Crystal and the Amorphous State Induced in Elemental Si by Laser QuenchingPhysical Review Letters, 1982
- Computer modeling of the temperature rise and carrier concentration induced in silicon by nanosecond laser pulsesJournal of Applied Physics, 1982
- Calculation of carrier and lattice temperatures induced in Si by picosecond laser pulsesApplied Physics Letters, 1982
- Phase Transitions in Amorphous Si Produced by Rapid HeatingPhysical Review Letters, 1980
- Heat flow in an aluminium sample undergoing melting and resolidification under irradiation by a nanosecond laser pulseRadiation Effects, 1980
- Picosecond laser-induced melting and resolidification morphology on SiApplied Physics Letters, 1979
- Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser IrradiationPhysical Review Letters, 1979
- Under what conditions can a glass be formed?Contemporary Physics, 1969