Coincidence of the thermal melting points of crystalline and amorphous Si and coincidence of thresholds for pulsed beam annealing of crystalline and amorphous Si and GaAs
- 30 September 1982
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 43 (11) , 807-811
- https://doi.org/10.1016/0038-1098(82)90844-4
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Laser-Induced Melt Dynamics of Si and SilicaPhysical Review Letters, 1981
- Plasma annealing state of semiconductors; plasma condensation to a superconductivity- like state at 1000 K?Solid State Communications, 1981
- Transition temperatures and heats of crystallization of amorphous Ge, Si, and Ge1−xSix alloys determined by scanning calorimetryJournal of Applied Physics, 1981
- The Si(111) 7 × 7 TO “1 × 1” transitionSurface Science, 1981
- Phase Transitions in Amorphous Si Produced by Rapid HeatingPhysical Review Letters, 1980
- A new technique for observing the amorphous to crystalline transformation in thin surface layers on silicon wafersJournal of Applied Physics, 1980
- Reasons to believe pulsed laser annealing of Si does not involve simple thermal meltingPhysics Letters A, 1979
- Nonthermal pulsed laser annealing of Si; plasma annealingPhysics Letters A, 1979
- Residual defects in implanted layers on silicon after high-temperature annealingRadiation Effects, 1978
- Specific Heat and Heat of Crystallization of Amorphous GermaniumJournal of Applied Physics, 1969