Residual defects in implanted layers on silicon after high-temperature annealing
- 1 January 1978
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 37 (3) , 167-172
- https://doi.org/10.1080/00337577808233185
Abstract
Results are presented of an investigation of the residual defect structure after high-temperature (>1000°C) annealing (HTA) of implanted layers in silicon. The most typical defects after HTA are dislocation loops (DL) and a misfit dislocation network (MDN). The effect of the irradiation and annealing conditions on the defect formation are presented. The important role of point defects in MDN formation is discovered. A possible role of these defects in changing electrophysical properties of the implanted layers is discussed.Keywords
This publication has 7 references indexed in Scilit:
- Dislocation networks in phosphorus-implanted siliconPhilosophical Magazine, 1977
- Dislocation reactions in arsenic-implanted and annealed siliconPhysica Status Solidi (a), 1976
- The nature and habit planes of defects in P+ ion-implanted siliconPhysica Status Solidi (a), 1974
- Identification of interstitial- and vacancy-type dislocation loops in ion-implanted siliconJournal of Applied Physics, 1974
- High-Dose Implantations of P, As, and Sb in Silicon: A Comparison of Room-Temperature Implantations Followed by a 550°C Anneal and Implantations Conducted at 600°CJournal of the Electrochemical Society, 1970
- Oxidation, defects and vacancy diffusion in siliconPhilosophical Magazine, 1969
- Useful Properties of Dark‐Field Electron ImagesPhysica Status Solidi (b), 1965