The nature and habit planes of defects in P+ ion-implanted silicon
- 16 November 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 26 (1) , 345-352
- https://doi.org/10.1002/pssa.2210260136
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Identification of interstitial- and vacancy-type dislocation loops in ion-implanted siliconJournal of Applied Physics, 1974
- The determination of the geometry and nature of small Frank loops using the weak‐beam methodJournal of Microscopy, 1973
- Damage produced by ion mplantation in siliconRadiation Effects, 1970
- Investigations of dislocation strain fields using weak beamsPhilosophical Magazine, 1969
- Useful Properties of Dark‐Field Electron ImagesPhysica Status Solidi (b), 1965