Improved MOCVD technology in high throughput high efficiency GaAs/Ge solar cell manufacture

9 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 393-398
https://doi.org/10.1109/pvsc.1991.169245

Abstract

GaAs/Ge (inactive germanium) solar cells (8 cm/sup 2/) grown on a 0.2 mm thick Ge substrates has been space qualified and produced in a large-scale production environment (>2000 8 cm/sup 2/ cells/week). AMO efficiencies over 20% have been demonstrated for areas up to 6 cm*6 cm, A detailed discussion is given on MOCVD technology improvements made in high throughput GaAs solar cell manufacture. Results showing the consistency of layer composition and quality on several different cell structures are presented.<>

Keywords

This publication has 2 references indexed in Scilit:

Large scale, high efficiency GaAs/Ge cell production
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
High volume production of rugged, high efficiency GaAs/Ge solar cells
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1988