Finite-Temperature Fermi-Edge Singularity in Tunneling Studied Using Random Telegraph Signals
- 4 December 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 75 (23) , 4274-4277
- https://doi.org/10.1103/physrevlett.75.4274
Abstract
We show that random telegraph signals in metal-oxide-silicon transistors at millikelvin temperatures provide a powerful means of investigating tunneling between a two-dimensional electron gas and a single defect state. The tunneling rate shows a peak when the defect level lines up with the Fermi energy, in excellent agreement with theory of the Fermi-edge singularity at finite temperature. This theory also indicates that defect levels are the origin of the dissipative two-state systems observed previously in similar devices.Keywords
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