A 0.6-watt U-band monolithic MESFET power amplifier
- 31 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 531-534 vol.2
- https://doi.org/10.1109/mwsym.1993.276883
Abstract
A high-performance four-stage monolithic microwave integrated circuit (MMIC) power amplifier chip has been developed using 0.3- mu m gate-length and molecular beam epitaxial (MBE) MESFET technologies. These power MMIC chips have been combined to constitute a 47-GHz power amplifier with an output power of 0.45 W and an associated gain of 16.6 dB. A saturated output power of over 0.58 W was also achieved at 47 GHz. These results represent the highest reported power and gain at U-band from a MMIC amplifier using a 0.3- mu m gate-length MESFET. This amplifier has potential application as a driver for a monolithic doubler to obtain more than 80 mW of transmitted power at 94 GHz for W-band system applications.Keywords
This publication has 5 references indexed in Scilit:
- GaAs molecular beam epitaxy monolithic power amplifiers at U-bandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- V-band monolithic power MESFET amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 0.25-watt three-stage Q-band MESFET monolithic power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 35-GHz monolithic GaAs FET power amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Millimeter Wave Monolithic GaAs Power FET AmplifiersPublished by SPIE-Intl Soc Optical Eng ,1988