Effects of rapid thermal processing on thermal oxides of silicon
- 1 November 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (9) , 3360-3363
- https://doi.org/10.1063/1.337704
Abstract
The effects of rapid thermal processing (RTP) on the electrical properties of thin gate oxides in metal-oxide-semiconductor (MOS) devices have been studied. MOS capacitors have been analyzed by current-voltage (I-V) and constant current stress techniques. MOS field-effect transistors (MOSFETs) have been fabricated using RTP for the post-implant anneal, and the transistor degradation due to hot carrier injection has also been investigated. No significant RTP-induced degradation was detected in any category of the device properties considered here. An abnormal trapping behavior was observed on the wafer annealed at high temperature and/or long duration.This publication has 5 references indexed in Scilit:
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