MOVPE grown InP:Yb layers using Yb(IpCp)3 as a new doping source
- 1 March 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 100 (3) , 467-470
- https://doi.org/10.1016/0022-0248(90)90246-h
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- InP:Yb layers grown by adduct metalorganic vapor phase epitaxy using Yb(M e C p)3Applied Physics Letters, 1988
- Electrical properties of ytterbium-doped InP grown by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 µmElectronics Letters, 1988
- Photoluminescence characterization of rare-earth (Er, Yb)-doped InP grown by metalorganic chemical vapor depositionJournal of Luminescence, 1988
- Excitation and decay mechanisms of the intra-4f luminescence of Yb3+ in epitaxial InP:Yb layersApplied Physics Letters, 1988
- Liquid phase epitaxy and characterization of rare-earth-ion (Yb, Er) doped InPJournal of Crystal Growth, 1987
- Time Resolved Photoluminescence of Yb in InPMRS Proceedings, 1987
- Observation of enhanced single longitudinal mode operation in 1.5-μm GaInAsP erbium-doped semiconductor injection lasersApplied Physics Letters, 1986
- Rare earth ions in LPE III-V semiconductorsJournal of Crystal Growth, 1986