Photoluminescence characterization of rare-earth (Er, Yb)-doped InP grown by metalorganic chemical vapor deposition
- 29 February 1988
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 40-41, 901-902
- https://doi.org/10.1016/0022-2313(88)90490-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Erbium doping of molecular beam epitaxial GaAsApplied Physics Letters, 1987
- Observation of enhanced single longitudinal mode operation in 1.5-μm GaInAsP erbium-doped semiconductor injection lasersApplied Physics Letters, 1986
- Rare earth ions in LPE III-V semiconductorsJournal of Crystal Growth, 1986
- Luminescence of Rare-Earth-Activated Cadmium SulfideThe Journal of Chemical Physics, 1966