Erbium doping of molecular beam epitaxial GaAs

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Abstract
The doping of molecular beam epitaxial GaAs with erbium up to a concentration of 2×1019 cm−3 has been successfully demonstrated. Up to a concentration of about 5×1018 cm−3 the surface morphology remained good but for higher doping levels the surface became structured. Hall and profile measurements indicate that erbium doping gives rise to a trapping level capable of compensating silicon-doped layers. For the first time photoluminescence from a rare earth element incorporated in a III-V semiconductor has been observed at room temperature.