Importance of first layer thickness on TFT characteristics using a-Si:H deposited by 2-step process
- 1 May 1996
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 198-200, 1130-1133
- https://doi.org/10.1016/0022-3093(96)00062-2
Abstract
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This publication has 1 reference indexed in Scilit:
- Defect Formation Process during Growth of Hydrogenated Amorphous Silicon at High TemperaturesJapanese Journal of Applied Physics, 1992