Defect Formation Process during Growth of Hydrogenated Amorphous Silicon at High Temperatures

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Abstract
The deposition rate dependence of the defect density at elevated substrate temperatures during the preparation of hydrogenated amorphous silicon reveals the importance of reactions of precursors on the growth surface. The concept of precursor assisted defect suppression is delineated and used to prepare materials with defect densities that are significantly lower than those available at present.