Deposition of device quality, low H content amorphous silicon
- 1 May 1991
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (9) , 6728-6730
- https://doi.org/10.1063/1.348897
Abstract
Device‐quality hydrogenated amorphous silicon containing as little as 1/10 the bonded H observed in device‐quality glow discharge films have been deposited by thermal decomposition of silane on a heated filament. These low H content films show an Urbach edge width of 50 mV and a spin density of ∼1/100 as large as that of glow discharge films containing comparable amounts of H. High substrate temperatures, deposition in a high flux of atomic H, and lack of energetic particle bombardment are suggested as reasons for this behavior.This publication has 25 references indexed in Scilit:
- Small-angle X-ray scattering studies of microvoids in a-SiC:H and a-Si:HSolar Cells, 1989
- Incorporation of polyhydride bonding groups into thin films of hydrogenated amrophous silicon (a-;Si:H)Journal of Non-Crystalline Solids, 1989
- The defect density in amorphous siliconPhilosophical Magazine Part B, 1989
- Study on catalytic chemical vapor deposition method to prepare hydrogenated amorphous siliconJournal of Applied Physics, 1989
- Microstructure and the Urbach Edge in Glow Discharge Deposited a-SiC:HMRS Proceedings, 1988
- Band tails, entropy, and equilibrium defects in hydrogenated amorphous siliconPhysical Review Letters, 1987
- Bonding and Release of Hydrogen in a-Si:C:H AlloysMRS Proceedings, 1985
- Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous SiliconPhysical Review Letters, 1981
- Hydrogen content and density of plasma-deposited amorphous silicon-hydrogenJournal of Applied Physics, 1979
- a-Si : H produced by high-temperature thermal decomposition of silaneJournal of Applied Physics, 1979