Band tails, entropy, and equilibrium defects in hydrogenated amorphous silicon
- 10 August 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 59 (6) , 688-691
- https://doi.org/10.1103/physrevlett.59.688
Abstract
A method of calculation of the equilibrium defect concentration for a disordered semiconductor with exponential band tails is presented. For hydrogenated amorphous silicon, the entropy-of-mixing term in the expression for the free energy is found by consideration of the dangling bonds as an impurity in a system of bonding orbitals. These calculations are compared with experimental results.Keywords
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