Thermal equilibration in doped amorphous silicon
- 15 August 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (4) , 3030-3033
- https://doi.org/10.1103/physrevb.34.3030
Abstract
The structure of doped amorphous silicon is shown to be in metastable thermal equilibrium above 130°C, having temperature-dependent densities of dangling bonds and donors. The time to reach equilibrium is thermally activated, so that cooling establishes a slowly relaxing nonequilibrium state resembling a glass. The results are interpreted in terms of the recent defect-compensation model of doping.Keywords
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