Localized states in doped amorphous silicon
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 1-16
- https://doi.org/10.1016/0022-3093(85)90599-x
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Donor States in Hydrogenated Amorphous Silicon and GermaniumPhysical Review Letters, 1985
- Identification of deep-gap states ina-Si:H by photo- depopulation-induced electron-spin resonancePhysical Review B, 1985
- Localized states in compensatedPhysical Review B, 1984
- Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopyPhysical Review B, 1982
- Identification of the Dangling-Bond State within the Mobility Gap of-Si: H by Depletion-Width-Modulated ESR SpectroscopyPhysical Review Letters, 1982
- Defect states in doped and compensated-Si: HPhysical Review B, 1981
- Electron Spin Resonance of Doped Glow‐Discharge Amorphous SiliconPhysica Status Solidi (b), 1981
- Glow discharge optical spectroscopy measurement of dopant concentrations in a-Si:HJournal of Non-Crystalline Solids, 1980
- Density of States in the Gap of Tetrahedrally Bonded Amorphous SemiconductorsPhysical Review Letters, 1978
- Luminescence studies of plasma-deposited hydrogenated siliconPhysical Review B, 1978