Glow discharge optical spectroscopy measurement of dopant concentrations in a-Si:H
- 29 February 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 273-277
- https://doi.org/10.1016/0022-3093(80)90606-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Substitutional doping of amorphous siliconSolid State Communications, 1975
- Glow discharge optical spectroscopy for microvolume elemental analysisJournal of Applied Physics, 1975
- Measurement of boron impurity profiles in Si using glow discharge optical spectroscopyApplied Physics Letters, 1974
- Glow-discharge optical spectroscopy for the analysis of thin filmsJournal of Applied Physics, 1973
- Diffusion of Boron from Shallow Ion Implants in SiliconJournal of the Electrochemical Society, 1972
- Mass-Spectrometric Study of Sputtering of Single Crystals of GaAs by Low-Energy A IonsJournal of Applied Physics, 1967