Effects of Deuterium on Low-Temperature Si Epitaxy by Photo-Chemical Vapor Deposition
- 1 May 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (5R) , 893
- https://doi.org/10.1143/jjap.30.893
Abstract
Epitaxial Si films have been successfully grown by the photochemical vapor deposition process using the mixture of SiH4, SiH2F2 and D2 gases at temperatures from 200 to 475°C. Using H2 as diluting gas, the epitaxial Si films were obtained at temperatures from 200 to 350°C. However, the upper limit of the growth temperature was raised about 100°C (from 350 to 475°C) by substituting D2 for H2 as the diluting gas. Surface morphology and crystallinity were also improved with D2. Furthermore, we carried out heavy phosphorous doping with D2 and obtained a film with an electron concentration of 1×1021 cm-3.Keywords
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