Heavily P-Doped (>1021 cm-3) Silicon Films Grown by Photochemical Vapor Deposition at a Very Low Temperature of 250°C
- 1 December 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (12A) , L2284
- https://doi.org/10.1143/jjap.28.l2284
Abstract
Heavily phosphorus-doped epitaxial silicon films have been successfully grown by a novel photochemical vapor deposition process at a very low temperature of 250°C. The epitaxial layers were deposited from SiH4-SiH2F2-PH3 gases diluted with H2 on single-crystal silicon substrates. The highest electron concentration of 2.3×1021 cm-3 was obtained at a doping quantity (PH3/SiH4) of 4.2%. From the dependence of resistivity on the sample temperatures, it was found that the obtained samples were “metallic”.Keywords
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