The origin of large dark spots in AlxGa1−xAs-GaAs heterostructure photoluminescence
- 1 August 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (3) , 203-205
- https://doi.org/10.1063/1.89648
Abstract
Large dark spots are explained in terms of current flow in heterojunctions and surface recombination. A theory of the photoluminescence line shape is presented and verified by experiment.Keywords
This publication has 3 references indexed in Scilit:
- Elastically enhanced nonradiative recombination at AlxGa1−xAs-GaAs heterointerfaceApplied Physics Letters, 1976
- Macroscopic deterioration of fluorescence from AlxGa1−xAs–GaAs DH material following microscopic physical damageApplied Physics Letters, 1974
- The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] SolutionJournal of the Electrochemical Society, 1973