Elastically enhanced nonradiative recombination at AlxGa1−xAs-GaAs heterointerface
- 1 February 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (3) , 140-142
- https://doi.org/10.1063/1.88667
Abstract
In the presence of an elastic strain gradient of order 10−5 μm−1, the nonradiative recombination rate at an (LPE) AlxGa1−xAs‐GaAs heterointerface is observed to increase, reversibly, by as much as 100‐fold.Keywords
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