DIFFUSION‐DRIFT MODELING OF STRONG INVERSION LAYERS
- 1 January 1987
- journal article
- Published by Emerald Publishing in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering
- Vol. 6 (1) , 11-18
- https://doi.org/10.1108/eb010295
Abstract
By generalizing the equation of state of the conduction electron gas in a semiconductor to include a dependence not only on electron density but also on the density gradient we show that the standard diffusion-drift description can be extended to describe much of the quantum mechanical behavior exhibited by strong inversion layers.Keywords
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