Photoluminescence and band edge alignment of C-induced Ge islands and related SiGeC structures

9 November 1998

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 73 (19) , 2790-2792
https://doi.org/10.1063/1.122592

Abstract

Growth of less than 2 monolayersGe on a submonolayer amount of predeposited C on Si results in the formation of very small Ge quantum islands. In a photoluminescence study, we compare these C-induced Ge (CGe) dots with carefully chosen reference structures incorporating the same total amount of C and Ge but with different deposition orders and with varied C distribution below the Ge islands. Our investigations imply that the special combination of pregrown low surface mobility C and post-grown high surface mobility Ge constitutes a distinct microstructure within the SiGeC material system, causing dot formation at a very early stage and showing particularly intense photoluminescence signal. Moreover, structures combining CGe dots with Si 1−y C y quantum wells are well explained by the model of spatially indirect type-II recombination within the CGe islands.

Keywords

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