Influence of pre-grown carbon on the formation of germanium dots
- 1 May 1998
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 321 (1-2) , 70-75
- https://doi.org/10.1016/s0040-6090(98)00446-5
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Bimodal height distribution of self-assembled germanium islands grown on Si0.84Ge0.16 pseudo-substratesThin Solid Films, 1998
- Band Alignment in and Quantum Wells by Photoluminescence under Applied [100] and [110] Uniaxial StressPhysical Review Letters, 1997
- Pseudomorphic Si1−yCy and Si1−x−yGexCy alloy layers on SiThin Solid Films, 1997
- Growth and characterization of self-assembled Ge-rich islands on SiSemiconductor Science and Technology, 1996
- Near-Band-Edge Photoluminescence from PseudomorphicQuantum Well StructuresPhysical Review Letters, 1996
- Islands formation conditions in silicon-germanium alloys grown by MBEJournal of Crystal Growth, 1995
- Photoluminescence and electroluminescence of SiGe dots fabricated by island growthApplied Physics Letters, 1995
- Defect-free Stranski-Krastanov growth of strained Si1-xGex layers on SiJournal of Crystal Growth, 1994
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990