A novel 2DEGFET model based on the parabolic velocity-field curve approximation
- 1 October 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (10) , 1580-1586
- https://doi.org/10.1109/t-ed.1986.22710
Abstract
A new model for selectively doped heterostructure two-dimensional electron gas (2DEG) FET's has been proposed. In order to take into account the strong field dependence of the 2DEG mobility, a parabolic approximation is employed for a velocity-field curve below a velocity saturation field. The nonlinear field dependence of parasitic resistances has also been considered, which is of great importance for a more accurate description of actual FET characteristics. The proposed FET model is very useful for a digital IC design, since it has fewer fitting parameters and gives a smooth fit to measured data. Good agreement between the calculated drain current-voltage characteristics and the experimental characteristics, both for short-gate FET's and for long-gate FET's, demonstrates the validity of the present model. In addition, it has been recently found from the analysis that a transconductance compression is possible caused by a current limitation, due to hot electrons in the source-to-gate region, even though the n-(AlGa)As layer is totally depleted.Keywords
This publication has 14 references indexed in Scilit:
- Ultra-high-speed ring oscillators based on self-aligned-gate modulation-doped n + -(Al, Ga)As/GaAs FETsElectronics Letters, 1985
- A new model for modulation-doped FET'sIEEE Electron Device Letters, 1985
- Modeling for an AlGaAs/GaAs heterostructure device using Monte Carlo simulationIEEE Electron Device Letters, 1985
- Two-dimensional transient simulation of an idealized high electron mobility transistorIEEE Transactions on Electron Devices, 1985
- Microwave performance of 0.25-µm gate length high electron mobility transistorsIEEE Electron Device Letters, 1985
- Low Noise High Electron Mobility TransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FET's and MODFET characterizationIEEE Transactions on Electron Devices, 1984
- Current—Voltage and capacitance—Voltage characteristics of modulation-doped field-effect transistorsIEEE Transactions on Electron Devices, 1983
- Metal-(n) AlGaAs-GaAs two-dimensional electron gas FETIEEE Transactions on Electron Devices, 1982
- Field dependence of mobility in Al 0.2 Ga 0.8 As/GaAs heterojunctions at very low fieldsElectronics Letters, 1981