Low Noise High Electron Mobility Transistors

Publisher Website

1 January 1984

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 83-87
https://doi.org/10.1109/mcs.1984.1113610

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors
Applied Physics Letters, 1984
Quarter micron low noise GaAs FET's
IEEE Electron Device Letters, 1982
Model for modulation doped field effect transistor
IEEE Electron Device Letters, 1982