Damage Produced in Ge at Room Temperature by Indentation

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Abstract
Damage produced at room temperature by a spherical indenter on etch‐polished Ge surfaces and the effect of subsequent annealing at 550°C was studied with an optical microscope using interference contrast techniques. No evidence for dislocation glide at room temperature was obtained. Dislocation generation and motion during subsequent anneals occurred only in association with microcracks, which were in all cases observable without etching. By using dislocation etch pit counts to infer glide step heights, it was estimated that steps of height less than 15 Å may be detected with interference contrast under favorable conditions. Polished TiO2 and MgO cleavage surfaces were also indented and examined. Clear evidence for dislocation generation and motion was obtained in both cases.

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