Potential performance of indium-nitride-based devices
- 10 April 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (15) , 152113
- https://doi.org/10.1063/1.2193469
Abstract
We study how electrons, initially in thermal equilibrium, drift under the action of an applied electric field within bulk wurtzite indium nitride. We find that the optimal cutoff frequency for an ideal indium-nitride-based device ranges from around when the device thickness is set to to about when the device thickness is set to . We thus suggest that indium nitride offers great promise for future high-speed device applications.
Keywords
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